08 oct | Institut Catala de Nanociencia i Nanotecnologia | Barcelona Mission The mission of the Catalan Institute of Nanoscience and Nanotechnology (ICN2) is to achieve the highest level of scientific and technological excellence in Nanoscience and Nanotechnology. Its research lines focus on the newly-discovered physical and chemical properties that arise from the behaviour of matter at the nanoscale. Overview ICN2 comprises: 19 Research Groups 7 Technical Development and Support Units and Facilities 2 Research Platforms These cover different areas of nanoscience and nanotechnology.Job Title Postdoctoral Researcher Research area or group Advanced Electronic Materials and Devices Description of Group/Project The Advanced Electronic Materials and Devices (AEMD) group focuses on the material sciences and technology aspects of novel electronic materials, with a strong emphasis on graphene as well as other 2D materials (MoS2). The group also works towards the development of technological applications based on these materials such as electronics, bioelectronics and biosensing, neural interfaces, etc. The activities cut across different scientific aspects, from the fundamentals (the physics of devices and semiconductors) to materials (growth of graphene and MoS2 materials by CVD and MOCVD, surface functionalisation, advanced characterisation), through to devices (fabrication technology, nanofabrication) and applications (neural implants and biomedical technologies, biosensors, flexible electronics). Main Tasks and Responsibilities The candidate will be working in a very multidisciplinary project that covers topics such as: Materials science of graphene and other 2D materials Thin film technologies for neural interfaces In-vivo device validation of the neural technologies The main role of the candidate will be the design, fabrication, and characterization of multiplexed arrays of graphene transistors for monitoring brain activity. The research activity of the candidate will be funded by the European Union, through the 'Graphene Transistors for High-Density Brain-Computer Interfaces' Project with reference number 101136541.Requirements Education: PhD in Biomedical Engineering, Materials Science, Nanotechnology, Engineering, Chemistry, Physics, or equivalent degrees.Knowledge and Professional Experience: Science and technology of neural interfaces and implantable devices Thin-film technology and device microfabrication, flexible electronics 2D materials and technology Electrochemistry Experience in microscopic and spectroscopic characterization techniques (Raman, PL, AFM, SEM, TEM and XPS) Neuroscience, electrophysiology Personal Competences: Teamwork skills, Fluent English (both spoken and written).Summary of Conditions Full time work: 37.5h/weekContract Length:Location: Bellaterra (Barcelona)Salary: Will depend on qualifications and demonstrated experience. #J-18808-Ljbffr