Qorvo (Nasdaq: QRVO) supplies innovative semiconductor solutions that make a better world possible.
We combine product and technology leadership, systems-level expertise, and global manufacturing scale to quickly solve our customers' most complex technical challenges.
Qorvo serves diverse high-growth segments of large global markets, including consumer electronics, smart home/IoT, automotive, EVs, battery-powered appliances, network infrastructure, healthcare, and aerospace/defense.
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The Bulk Acoustic Wave (BAW) R&D team looks to hire an R&D Modeling/Development Engineer with a focus on device modeling and device physics.
In our ongoing effort to improve device performance and diversify our product spectrum, we need a creative person to model BAW devices.
The candidate will be tasked with: Improving the understanding of the underlying physics of these devices.
Translating the findings into novel BAW designs.
Developing acoustic models for our cutting-edge BAW devices.
As a member of the BAW R&D team, the candidate will have the opportunity to work closely with groups like process and design engineering to develop our next generation BAW technology.
The ideal candidate is a very technical person who finds solving challenging problems to be a rewarding task.
Our BAW business is growing rapidly, and we desire a highly motivated individual excited to be part of this opportunity.
The position is for our Qorvo Barcelona office in Spain and requires good communication skills in English, both verbal and written, as the candidate will be working closely with US teams.
Qualifications Required PhD degree in physics, mechanical / electrical engineering, or related fields Strong background in physical acoustics and wave propagation in solids Good programming skills in languages such as Matlab Proficiency in English Desired Experience in BAW / SAW or other MEMS / acoustic devices Experience with FEM tools (e.g., COMSOL) Knowledge on piezoelectricity Knowledge in material physics Understanding of electrical circuit analysis Familiar with semiconductor processing techniques #LI-AC1 #J-18808-Ljbffr